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Metalorganic Molecular Beam Epitaxy of CuInSe2on GaAs Substrate
- Source :
- Japanese Journal of Applied Physics; September 1998, Vol. 37 Issue: 9 pL1033-L1033, 1p
- Publication Year :
- 1998
-
Abstract
- The metalorganic molecular beam epitaxial growth of CuInSe2layers on a GaAs(100) substrate was performed at 550°C using cyclopentadienylcoppertriethylphosphine (CpCuTEP), triethylindium and selenium as source precursors. CuInSe2layers with a flat surface were successfully grown. The epilayers were examined by X-ray diffraction, photoluminescence (PL) and photoreflectance measurements. The CuInSe2layer grown under optimum conditions exhibited an exciton emission in the PL spectrum.
Details
- Language :
- English
- ISSN :
- 00214922 and 13474065
- Volume :
- 37
- Issue :
- 9
- Database :
- Supplemental Index
- Journal :
- Japanese Journal of Applied Physics
- Publication Type :
- Periodical
- Accession number :
- ejs56132858
- Full Text :
- https://doi.org/10.1143/JJAP.37.L1033