36.1: Invited Paper:High Performance PrIZO Oxide TFTs and the Target Fabrication

Praseodymium‐doped indium zinc oxide (PrIZO) has been employed as the channel layer of thin film transistors (TFTs). The TFTs with Pr doping exhibit a remarkable suppression of the light induced instability. A negligible photo‐response and remarkable enhancement in negative gate bias stress under illumination (NIBS) are achieved in the PrIZO TFTs. Meanwhile, the PrIZO TFTs show reasonable characteristics with a high field effect mobility of 26.3 cm2/Vs, SS value of 0.28V/decade, and Ion/Ioffratio of 109. A prototype of fully transparent AMOLED display is successfully fabricated to demonstrate the potential of Pr‐doping TFTs applied in transparent devices. The G4.5 target of PrIZO has been fabricated for the future mass production.