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The Influence of CsBr on Crystal Orientation and Optoelectronic Properties of MAPbI3-Based Solar Cells

Authors :
Zou, Yuqin
Yuan, Shuai
Buyruk, Ali
Eichhorn, Johanna
Yin, Shanshan
Reus, Manuel A.
Xiao, Tianxiao
Pratap, Shambhavi
Liang, Suzhe
Weindl, Christian L.
Chen, Wei
Mu, Cheng
Sharp, Ian D.
Ameri, Tayebeh
Schwartzkopf, Matthias
Roth, Stephan V.
Müller-Buschbaum, Peter
Source :
ACS Applied Materials & Interfaces; January 2022, Vol. 14 Issue: 2 p2958-2967, 10p
Publication Year :
2022

Abstract

Crystal orientations are closely related to the behavior of photogenerated charge carriers and are vital for controlling the optoelectronic properties of perovskite solar cells. Herein, we propose a facile approach to reveal the effect of lattice plane orientation distribution on the charge carrier kinetics via constructing CsBr-doped mixed cation perovskite phases. With grazing-incidence wide-angle X-ray scattering measurements, we investigate the crystallographic properties of mixed perovskite films at the microscopic scale and reveal the effect of the extrinsic CsBr doping on the stacking behavior of the lattice planes. Combined with transient photocurrent, transient photovoltage, and space-charge-limited current measurements, the transport dynamics and recombination of the photogenerated charge carriers are characterized. It is demonstrated that CsBr compositional engineering can significantly affect the perovskite crystal structure in terms of the orientation distribution of crystal planes and passivation of trap-state densities, as well as simultaneously facilitate the photogenerated charge carrier transport across the absorber and its interfaces. This strategy provides unique insight into the underlying relationship between the stacking pattern of crystal planes, photogenerated charge carrier transport, and optoelectronic properties of solar cells.

Details

Language :
English
ISSN :
19448244
Volume :
14
Issue :
2
Database :
Supplemental Index
Journal :
ACS Applied Materials & Interfaces
Publication Type :
Periodical
Accession number :
ejs58640044
Full Text :
https://doi.org/10.1021/acsami.1c22184