Back to Search
Start Over
Electron holographic mapping of two-dimensional doping areas in cross-sectional device specimens prepared by the lift-out technique based on a focused ion beam
- Source :
- Journal of Electron Microscopy; April 2004, Vol. 53 Issue: 2 p115-119, 5p
- Publication Year :
- 2004
-
Abstract
- Recently, electron holography has been successfully applied to analyze two-dimensional (2D) dopant distribution in semiconductor devices with high resolution and high sensitivity. The preparation of proper specimens is a fundamental step for the practical application of electron holography in the semiconductor industry. Therefore, it is important to explore a reliable and quick specimen preparation method. In our current work, we have tried to use the lift-out technique based on a focused ion beam, to fabricate cross-sectional CMOS device specimens for electron holographic observation. Using the lift-out technique, specimens with a large area and uniform thickness can be prepared directly from integrated circuit wafers in a very short time. Specimens with a complex and unknown dopant distribution were examined using off-axis electron holography. In the reconstructed phase images, the different 2D doping areas in a CMOS device, such as source, drain, well and substrate, were revealed successfully. The advantages and disadvantages of the technique are discussed.
Details
- Language :
- English
- ISSN :
- 00220744
- Volume :
- 53
- Issue :
- 2
- Database :
- Supplemental Index
- Journal :
- Journal of Electron Microscopy
- Publication Type :
- Periodical
- Accession number :
- ejs6019598