Vertically oriented SnS2on MoS2nanosheets for high-photoresponsivity and fast-response self-powered photoelectrochemical photodetectors

Van der Waals heterostructures have great potential for the emerging self-powered photoelectrochemical photodetectors due to their outstanding photoelectric conversion capability and efficient interfacial carrier transportation. By considering the band alignment, structural design, and growth optimization, the heterostructures of vertically oriented SnS2with different densities on MoS2nanosheets are designed and fabricated using a two-step epitaxial growth method. Compared with SnS2, MoS2, and low density–vertical SnS2/MoS2heterostructure, the high density–vertical SnS2/MoS2heterostructure exhibits largely enhanced self-powered photodetection performances, such as a giant photocurrent density (∼932.8 μA cm−2), an excellent photoresponsivity (4.66 mA W−1), and an ultrafast response/recovery time (3.6/6.4 ms) in the ultraviolet-visible range. This impressive enhancement of high density–vertical SnS2/MoS2photodetectors is mainly ascribed to the essentially improved charge transfer and carrier transport of type-II band alignment heterostructures and the efficient light absorption from the unique light-trapping structure. In addition, the photoelectrocatalytic water splitting performance of the high density–vertical SnS2/MoS2heterostructure also benefits from the type-II band alignment and the light-trapping structure. This work provides valuable inspiration for the design of two-dimensional optoelectronic and photoelectrochemical devices with improved performance by the morphology and heterostructure design.