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Ultrasmall SnS2quantum dot−based photodetectors with high responsivity and detectivity
- Source :
- Nano-photonics; October 2022, Vol. 11 Issue: 21 p4781-4792, 12p
- Publication Year :
- 2022
-
Abstract
- Quantum dots (QDs) often exhibit unique behaviors because the reduction in lateral size leads to stronger quantum confinement effects and a higher surface-to-volume ratio in comparison with larger two-dimensional nanosheets. However, the preparation of homogeneous QDs remains a longstanding challenge. This work reports the preparation of high-yield and ultrasmall tin disulfide (SnS2) QDs by combining top–down and bottom–up approaches. The as-prepared SnS2QDs have a uniform lateral size of 3.17 ± 0.62 nm and a thicknesses 2.39 ± 0.88 nm. A series of self-powered photoelectrochemical-type photodetectors (PDs) utilizing the SnS2QDs as photoelectrodes are also constructed. Taking advantage of the tunable bandgaps and high carrier mobility of the SnS2, our PDs achieve a high photocurrent density of 16.38 μA cm−2and a photoresponsivity of 0.86 mA W−1, and good long-term cycling stability. More importantly, the device can display obvious photoresponse, even at zero bias voltage (max), and greater weak-light sensitivity than previously reported SnS2-based PDs. Density functional theory calculation and optical absorption were employed to reveal the working mechanism of the SnS2QDs-based PDs. This study highlights the prospective applications of ultrasmall SnS2QDs and provides a new route towards future design of QDs-based optoelectronic devices.
Details
- Language :
- English
- ISSN :
- 21928606 and 21928614
- Volume :
- 11
- Issue :
- 21
- Database :
- Supplemental Index
- Journal :
- Nano-photonics
- Publication Type :
- Periodical
- Accession number :
- ejs61235929
- Full Text :
- https://doi.org/10.1515/nanoph-2022-0277