Mobility-Enhanced Device Technologies Using SiGe/Ge MOS Channels

Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review our recent results on the development of mobility-enhanced CMOS device structures using strained-Si/SiGe/Ge MOS channels and the carrier transport properties in those channels. It is shown, particularly, that uniaxial compressive strain and Ge channels are quite effective in pMOS performance enhancement, while uniaxial tensile strain is effective in nMOS performance.