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DyScHfOx as High-κ Gate Dielectrics: Structural and Electrical Properties
- Source :
- ECS Transactions; April 2007, Vol. 6 Issue: 1
- Publication Year :
- 2007
-
Abstract
- DyScHfOx high-κ dielectric thin films have been grown by atomic vapor deposition using Dy(EDMDD)3, Sc(EDMDD)3, and Hf(OBut)2(mmp)2. It was found that the entire DyxScyHfzOw com-positional range can be realized with this process. XRD showed that DyScO3 was amorphous as grown, whereas ScHfOx and Dy-HfOx were crystalline. The crystalline phase of both HfxSc1-xOy and HfxDy1-xOy changed from monoclinic to cubic around x = 0.1. Electrical characterization of nMOS capacitors and long-channel transistors showed that the EOT-leakage scaling of DyScOx was comparable to that of HfO2, whereas both DyHfOx and ScHfOx were comparable to HfSiO4. For the DyScHfOx materials, the elec-tron mobility was improved with respect to devices with HfO2 as a gate dielectric.
Details
- Language :
- English
- ISSN :
- 19385862 and 19386737
- Volume :
- 6
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- ECS Transactions
- Publication Type :
- Periodical
- Accession number :
- ejs61756180
- Full Text :
- https://doi.org/10.1149/1.2727394