Bistable Resistive Switching in Al2O3Memory Thin Films

In this study, we investigate the resistive switching behavior of radio frequency (rf)-sputtered Al2O3thin films. It is observed that both high-conducting state (ON state) and low-conducting state (OFF state) are stable and reproducible during successive resistive switchings by dc voltage sweeping. The ratio of resistance of the ON and OFF state is over 103. Such a reproducible resistive switching can be performed at 150°C, and the resistance of the ON state can be altered by various current compliances. The conduction mechanisms of the ON and OFF states are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Both states, performed by dc voltage sweeping and applying short pulse, are stable over 104sat a read voltage of 0.3Vand the electrical-pulse-induced resistance change (EPIR) phenomenon is demonstrated, which are all important properties for further resistive random access memory application.