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Label-Free Detection of BRAFV599EGene Mutation Using Side-Gated Nanowire Field Effect Transistors
- Source :
- Journal of the Electrochemical Society; January 2018, Vol. 165 Issue: 13
- Publication Year :
- 2018
-
Abstract
- The demand for ultrasensitive and reliable sensors for biomolecules detection and disease diagnostics has increased in modern-day scientific research. Semiconductor nanowire field-effect transistors (FET) can be used as biochemical sensors for ultrasensitive, selective, and label-free detection of low ion concentrations, molecules, proteins, DNA, and viruses. Thus, most devices with back gates for these nanowires are limited to large-scale fabrication and integration. In this study, a novel side-gated silicon nanowire (SiNW) FET was fabricated using complementary metal oxide semiconductor compatible technology. The side-gated SiNW-FET was employed as a biosensor for ultrasensitive detection of BRAFV599Egene mutation. Specific electrical performance was observed when the nanowire surface was functionalized using complementary and 1-base mismatch target DNA. A nanowire-based sensor was used to distinguish between the complementary and 1-base mismatch DNA through the dehybridization process at different melting temperatures. Results demonstrated that the side-gated SiNW-FET device could act as a label-free, highly sensitive, and selective biosensor for gene mutation sensing. Our approach offers the possibility of multidetection of the biological species with local control elements in a single integrated circuit.
Details
- Language :
- English
- ISSN :
- 00134651 and 19457111
- Volume :
- 165
- Issue :
- 13
- Database :
- Supplemental Index
- Journal :
- Journal of the Electrochemical Society
- Publication Type :
- Periodical
- Accession number :
- ejs61771286
- Full Text :
- https://doi.org/10.1149/2.0641813jes