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Process Optimization of HfAlO Trapping Layer for High Performance Charge Trap Flash Memory Application

Authors :
Zhang, Dong
Huo, Zongliang
Yang, Xiaonan
Liu, Ziyu
Chen, Guoxing
Han, Yulong
Sun, Zhong
Chu, Yuqiong
Wang, Chenjie
Yang, Baohe
Liu, Ming
Source :
ECS Transactions; March 2013, Vol. 52 Issue: 1
Publication Year :
2013

Abstract

In order to explore the correlation between process control of HfAlO film deposition and memory performance, 10nm HfAlO trapping layer was deposited by atom layer deposition (ALD) system, using three different deposition sequence of HfO2and Al2O3thin films (1nmHfO2/1nmAl2O3, 1nmHfO2/ 2nmAl2O3 and 3nmHfO2/1nmAl2O3). Comparing with HfO2single trapping layer, the HfAlO samples stacked in the sequence of 1nmHfO2/1nmAl2O3and 1nmHfO2/ 2nmAl2O3have faster program/erase speed, lager memory window, and significantly improved data retention characteristics. This is due to the high dielectric constant of HfO2 and appropriate band offset of HfO2 to Al2O3, also with the extra interface inserted between HfO2and Al2O3.

Details

Language :
English
ISSN :
19385862 and 19386737
Volume :
52
Issue :
1
Database :
Supplemental Index
Journal :
ECS Transactions
Publication Type :
Periodical
Accession number :
ejs61787380
Full Text :
https://doi.org/10.1149/05201.0967ecst