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Process Optimization of HfAlO Trapping Layer for High Performance Charge Trap Flash Memory Application
- Source :
- ECS Transactions; March 2013, Vol. 52 Issue: 1
- Publication Year :
- 2013
-
Abstract
- In order to explore the correlation between process control of HfAlO film deposition and memory performance, 10nm HfAlO trapping layer was deposited by atom layer deposition (ALD) system, using three different deposition sequence of HfO2and Al2O3thin films (1nmHfO2/1nmAl2O3, 1nmHfO2/ 2nmAl2O3 and 3nmHfO2/1nmAl2O3). Comparing with HfO2single trapping layer, the HfAlO samples stacked in the sequence of 1nmHfO2/1nmAl2O3and 1nmHfO2/ 2nmAl2O3have faster program/erase speed, lager memory window, and significantly improved data retention characteristics. This is due to the high dielectric constant of HfO2 and appropriate band offset of HfO2 to Al2O3, also with the extra interface inserted between HfO2and Al2O3.
Details
- Language :
- English
- ISSN :
- 19385862 and 19386737
- Volume :
- 52
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- ECS Transactions
- Publication Type :
- Periodical
- Accession number :
- ejs61787380
- Full Text :
- https://doi.org/10.1149/05201.0967ecst