(Invited) Fabrication and Characterization of β-Ga2O3Heterojunction Rectifiers

Copper Oxide and Nickel Oxide were deposited and investigated for their electrical and optical properties as a wide bandgap p-type oxide semiconductor. Heterojunctions of CuxOy/β-Ga2O3were fabricated with a rectification ratio of 2.5x104at ±2 V. NiO films were deposited using both RF sputtering and atomic layer deposition methods, resulting in rectifying heterojunctions in both cases. A 3.6 eV bandgap was measured upon a 500 °C post-deposition anneal for the sputtered films.