Enhanced Optical and Electrical Properties of GaN-Based Light-Emitting Diodes with Interconnecting Indium Tin Oxide Nanowires Using Self-Assembled NaCl Particles

GaN-based light emitting diodes (LEDs) with interconnecting indium tin oxide (ITO) nanowires were fabricated using self-assembled NaCl particles as etching masks. Compared to conventional LEDs with a planar ITO layer, it was found that the light output power (LOP) of the LEDs with a ITO layer with interconnecting nanowires was improved by 18.4% at an injection current of 20 mA. Meanwhile, a great improvement in the electrical characteristics of LEDs was also observed. These enhancements are attributed to the increase of photons escaping from the ITO surface with nanowires as well as the improved current spreading of the ITO layer with interconnecting ITO nanowires.