Back to Search
Start Over
Effect of Nitrogen Doping on Variability of TaOx-RRAM for Low-Power 3-Bit MLC Applications
- Source :
- ECS Solid State Letters; January 2015, Vol. 4 Issue: 3
- Publication Year :
- 2015
-
Abstract
- The switching uniformity and reliability of the TaOxbased resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen induced filament confinement.
Details
- Language :
- English
- ISSN :
- 21628742 and 21628750
- Volume :
- 4
- Issue :
- 3
- Database :
- Supplemental Index
- Journal :
- ECS Solid State Letters
- Publication Type :
- Periodical
- Accession number :
- ejs61798942
- Full Text :
- https://doi.org/10.1149/2.0011504ssl