High‐Sensitivity Polarized Light Detector of 2D WS2/Mo2CF2Van Der Waals Heterostructure

The photogalvanic effect (PGE) generated under linearly polarized light irradiation has remarkable applications in 2D nanodevices. The PGE of 2D WS2/Mo2CF2van der Waals (vdW) heterostructure can generate photocurrent and high sensitivity to polarized light. However, the PGE has less photogenerated current. On this basis, the photocurrent transport mechanism of PGE under low bias voltage is investigated. The results show that the photocurrent of the photon energy has cos2θ, sin2θand sin2θdependence on the polarization angle θunder the considered external bias voltage. Under a bias voltage of 1.0 V, the maximum photocurrent of 3.7 eV photon energy in the zigzag direction can reach 4.61. Under a bias voltage of 1 V, the maximum photocurrent of 1.8 eV photon energy in the armchair direction can reach 6.71. The maximum photocurrents are in the order of 10−1for both zigzag and armchair directions with 0 V bias. Furthermore, 2D WS2/Mo2CF2vdW heterostructure has a stable and high extinction ratio. These results show that 2D WS2/Mo2CF2vdW heterostructure is a potential candidate material for future optoelectronics in the visible light region. Herein, the photogalvanic effect of 2D WS2/Mo2CF2van der Waals heterostructures under linearly polarized light is studied. The magnitude of photocurrent in the armchair and zigzag directions is affected by the polarization angle. Meanwhile, 2D WS2/Mo2CF2van der Waals heterostructures have high sensitivity to polarized light and a stable extinction ratio.