Bi and S Co-doping g-C3N4to Enhance Internal Electric Field for Robust Photocatalytic Degradation and H2Production

By adjusting the type and proportion of doping elements in the g-C3N4-based photocatalyst, the internal electric field (IEF) strength of the semiconductor can be regulated. This can effectively enhance the driving force of charge separation in the photocatalytic process. It is found that the introduction of appropriate concentration of Bi and S into the skeleton structure of g-C3N4can achieve efficient degradation of tetracycline (TC) and other pollutants in the liquid environment and excellent photocatalytic H2evolution performance (1139 μmol•L−1•h−1). Since the prepared samples have similar crystal structures, the relative strength of IEF can be calculated. It can be used as the basis for adjusting the IEF strength of g-C3N4-based semiconductor by element doping. In addition, the Bi and S co-doped g-C3N4samples after solvothermal reflux show good chemical stability and can reduce the nanostructure defects caused by co-doping of heteroatoms, thus it provides a novel solution for the construction of g-C3N4-based dual-function photocatalyst with high activity and stability.