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Evaluation of Crystal Quality and Dopant Activation of Smart CutTM - Transferred 4H-SiC Thin Film
- Source :
- Materials Science Forum; May 2023, Vol. 1089 Issue: 1 p71-79, 9p
- Publication Year :
- 2023
-
Abstract
- The Smart CutTM process offers an advantageous opportunity to provide a large number of performance-improved SiC substrates for power electronics. The crystalline quality and the electrical activation of the 4H-SiC transferred layer are then at stake when it comes to the power device reliability. In this study, we find that the H<superscript>+</superscript> ion implantation used for the Smart CutTM process leads to electrical deactivation of dopants and partially disorders the material. The transferred layer fully recovers its initial crystalline quality after a 1300°C anneal, with no further evolution beyond this temperature. At this point however, the n-type dopants are still inactive. The dopant reactivation occurs in the same temperature range than that of implanted nitrogen: between 1400°C and 1700°C. After 1700°C, the initial doping level of bulk SiC is recovered.
Details
- Language :
- English
- ISSN :
- 02555476 and 16629752
- Volume :
- 1089
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Materials Science Forum
- Publication Type :
- Periodical
- Accession number :
- ejs63343253
- Full Text :
- https://doi.org/10.4028/p-026sj4