Chalcohalide Antiperovskite Thin Films with Visible Light Absorption and High Charge-Carrier Mobility Processed by Solvent-Free and Low-Temperature Methods

Silver chalcohalide antiperovskites represent a rather unexplored alternative to lead halide perovskites and other semiconductors based on toxic heavy metals. All synthetic approaches reported so far for Ag3SI and Ag3SBr require long synthesis times (typically days, weeks, or even months) and high temperatures. Herein, we report the synthesis of these materials using a fast and low-temperature method involving mechanochemistry. Structural and optical properties are examined experimentally and supported by first-principles calculations. Furthermore, we deposit Ag3SI as thin films by pulsed laser deposition and characterize its optoelectronic properties using optical-pump-terahertz-probe measurements, revealing a high charge-carrier mobility of 49 cm2V–1s–1. This work paves the way to the implementation of chalcohalide antiperovskites in various optoelectronic applications.