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Metal oxide ion-gated transistors: A perspective on in operandocharacterizations and emerging Li-ion-based applications
- Source :
- MRS Communications; 20230101, Issue: Preprints p1-9, 9p
- Publication Year :
- 2023
-
Abstract
- Graphical abstract: <fig id="Figa" position="anchor"> <caption lang="en"> Schematic representations of ion-gated transistors (IGT) making use of a metal oxide as semiconductor channel </caption> <graphic position="anchor" specific-use="HTML" mime-subtype="PNG" href="MediaObjects/43579_2023_437_Figa_HTML.png" id="MO1"></graphic> </fig>
Details
- Language :
- English
- ISSN :
- 21596859 and 21596867
- Issue :
- Preprints
- Database :
- Supplemental Index
- Journal :
- MRS Communications
- Publication Type :
- Periodical
- Accession number :
- ejs63875648
- Full Text :
- https://doi.org/10.1557/s43579-023-00437-z