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Van der Waals heterostructure of Bi2O2Se/MoTe2for high-performance multifunctional devices
- Source :
- Nano Energy; 20230101, Issue: Preprints
- Publication Year :
- 2023
-
Abstract
- Two-dimensional van der Waals heterostructures exhibit distinctive electronic and optoelectronic properties, making them promising structures for constructing advanced multifunctional devices. However, devices based on conventional charge-carrier transport mechanisms often perform only a single function, which limits its integration and performance. Here, we present a vertical van der Waals heterostructure made of Bi2O2Se and MoTe2, allowing it to act as high-performance backward diode, forward diode, photodetector and photovoltaic device at various working conditions. The applications are enabled by band-alignment switching between p−n heterostructure controlled by minority carrier diffusion and n−n heterostructure governed by the thermionic emission and tunneling-mediated processes. As a backward diode, the device displays a high reverse rectification ratio of 5.0×104. As a photodetector, the device demonstrates a broad spectral photoresponse ranging from ultraviolet (365nm) to near-infrared (1050nm). When irradiated by 532nm laser, the photodetector shows a responsivity of up to 11.6A/W and achieves quick response/recovery speed of 19.6/8.8 μs. As a photovoltaics device, an external quantum efficiency of 78% and a responsivity of 0.33A/W are observed. This study showcases the potential for high-performance multifunctional devices utilizing Bi2O2Se/MoTe2heterostructures and provides comprehensive insights into the designed band alignment and its applications.
Details
- Language :
- English
- ISSN :
- 22112855
- Issue :
- Preprints
- Database :
- Supplemental Index
- Journal :
- Nano Energy
- Publication Type :
- Periodical
- Accession number :
- ejs64384180
- Full Text :
- https://doi.org/10.1016/j.nanoen.2023.109047