On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory

MLA

Xu, Haotian, et al. “On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory.” IEEE Electron Device Letters, vol. 45, no. 1, Jan. 2024, pp. 112–15. EBSCOhost, https://doi.org/10.1109/LED.2023.3334756.

APA

Xu, H., Yang, J., Kampfe, T., Zhuo, C., Ni, K., & Yin, X. (2024). On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory. IEEE Electron Device Letters, 45(1), 112–115. https://doi.org/10.1109/LED.2023.3334756

Chicago

Xu, Haotian, Jianyi Yang, Thomas Kampfe, Cheng Zhuo, Kai Ni, and Xunzhao Yin. 2024. “On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory.” IEEE Electron Device Letters 45 (1): 112–15. doi:10.1109/LED.2023.3334756.