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Fabrication and Characterization of Self-Assembled Low Voltage Operated OTFT for H2S Gas Sensor for Oil and Gas Industry
- Source :
- IEEE Transactions on Electron Devices; January 2024, Vol. 71 Issue: 1 p769-776, 8p
- Publication Year :
- 2024
-
Abstract
- The article examines the low-voltage organic thin film transistor’s (OTFTs) manufacturing and characterization process for hydrogen sulfide (<inline-formula> <tex-math notation="LaTeX">$\text{H}_{{2}}\text{S}$ </tex-math></inline-formula>) gas sensing at room temperature and could be helpful at various emanating sites. The fabrication methodology utilizes a cost-efficient solution processed spin coating method for high-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> dielectric (SrZrOx) as a gate oxide and floating film transfer method (FTM) for silver nanoparticles doped PBTTT-C14 film for the active semiconductor layer. The developed spin-coated dielectric film offers a high capacitance of 433 nF/cm2 with a high band gap of 4.95 eV. and also offers 0.1 nA/cm2 leakage current density, which clarifies that the dielectric film has very less numbers of pin holes suitable for good-performing OTFT. The surface morphology of the dielectric film shows a very smooth dielectric film (rms roughness 0.245 nm), which demonstrates a high-quality dielectric/semiconductor interface offered by the dielectric film for the high performance of the device. On the other hand, the low-cost FTM deposited silver nanoparticles doped PBTTT-C14 active layer film is quite uniform (30 ± 3 nm thickness) and free from any anisotropic effect, which further improves the device performance for sensing applications. The developed sensor is deliberately characterized for <inline-formula> <tex-math notation="LaTeX">$\text{H}_{{2}}\text{S}$ </tex-math></inline-formula> gas sensor shows a sensing response of 80% at 5 ppm. The sensor passes with a low detection limit of 15.17 ppb and exhibits a relative shift of 47.7% over 5 ppm <inline-formula> <tex-math notation="LaTeX">$\text{H}_{{2}}\text{S}$ </tex-math></inline-formula> gas in threshold voltage. The developed device can be used in various gas emanating sites and oil industries.
Details
- Language :
- English
- ISSN :
- 00189383 and 15579646
- Volume :
- 71
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Periodical
- Accession number :
- ejs65168107
- Full Text :
- https://doi.org/10.1109/TED.2023.3336301