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Hybrid 2T nMOS/pMOS Gain Cell Memory With Indium-Tin-Oxide and Carbon Nanotube MOSFETs for Counteracting Capacitive Coupling
- Source :
- IEEE Electron Device Letters; February 2024, Vol. 45 Issue: 2 p188-191, 4p
- Publication Year :
- 2024
-
Abstract
- We demonstrate a back-end-of-line (BEOL) compatible 2T gain cell consisting of n-type indium-tin-oxide (ITO) MOSFET as a write transistor and p-type carbon nanotube (CNT) MOSFET as a read transistor. The opposite polarities help counteract the capacitive coupling in gain cells operating with voltage sensing: the drop of the storage node voltage due to the capacitive coupling with the write wordline (gate of a write nMOSFET) is fully recovered at the time of enabling the read wordline (source of a read pMOSFET) for readout. With the low leakage of an ITO nMOSFET and the opposite polarity of the read transistor, retention time of more than 500 s is achieved at zero-volt standby voltage. The results suggest that the hybrid combination of n-ITO and p-CNT is a promising approach to improve gain cell operation in terms of read margin, retention, and read speed for 3D integrated all-BEOL gain cell memory above the silicon FET logic layer.
Details
- Language :
- English
- ISSN :
- 07413106 and 15580563
- Volume :
- 45
- Issue :
- 2
- Database :
- Supplemental Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Periodical
- Accession number :
- ejs65364157
- Full Text :
- https://doi.org/10.1109/LED.2023.3344370