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Asymmetric transition of electrical resistance in an all-solid-state redox device with Fe3O4and Li-ion electrolyte thin films for physical reservoir computing
- Source :
- Japanese Journal of Applied Physics; March 2024, Vol. 63 Issue: 3 p03SP13-03SP13, 1p
- Publication Year :
- 2024
-
Abstract
- In recent years, ion-gating devices have been used in artificial neuromorphic computing and achieved high performance for time-series data processing. However, the origin of this performance still needs to be clarified. In this study, we fabricated an all-solid-state redox device with functional material Fe3O4and Li-ion conducting solid electrolytes, and the transient response of the electrical resistance of the Fe3O4thin film to time-series data input was investigated. The transition between high and low electrical resistance states was asymmetric, and residual Li-ion in the thin film led to a hysteresis effect. These unique features, which are induced by ion-electron dynamics coupling, contributes to the high performance of physical reservoir computing utilizing an ion-gating device.
Details
- Language :
- English
- ISSN :
- 00214922 and 13474065
- Volume :
- 63
- Issue :
- 3
- Database :
- Supplemental Index
- Journal :
- Japanese Journal of Applied Physics
- Publication Type :
- Periodical
- Accession number :
- ejs65474488
- Full Text :
- https://doi.org/10.35848/1347-4065/ad1fb0