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High-responsivity photodetectors made of indium selenide with visible to near-infrared photodetection
- Source :
- Chinese Journal of Physics; August 2024, Vol. 90 Issue: 1 p839-845, 7p
- Publication Year :
- 2024
-
Abstract
- •InSe photodetectors with a broad detection range from visible to near-IR region.•Ni/Au contacts onto InSe for fabricating metal-semiconductor–metal photodetectors.•Photoluminescence emission band centered at 520 nm is due to the E’ transition.•The inSe M-S-M PDs exhibited a typical responsivity of 1130 a W-1at 400 nm.
Details
- Language :
- English
- ISSN :
- 05779073
- Volume :
- 90
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Chinese Journal of Physics
- Publication Type :
- Periodical
- Accession number :
- ejs65583934
- Full Text :
- https://doi.org/10.1016/j.cjph.2024.02.035