A GaN-on-Si Gate Driver With Self-Pumped Drive Enhance and Short-Period Negative Voltage Techniques for Reduction of 14.7× Tailing Power Loss and 37% Reverse Conduction Loss

The gallium nitride (GaN)-on-Si low-side gate driver proposed in this article has four main features: First, the self-pumped drive enhance (SPDE) technique achieves fast transients. Second, short-period negative voltage (SPNV) technique avoids the Miller coupling effect and improves efficiency. Third, a dual-mode Voltage regulator ensures sufficient current and minimizes power dissipation. Finally, monolithic low-side gate drivers provide robust drive capability. This work can suppress the ringing caused by high dV / dt of <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {DS}}$ </tex-math></inline-formula>, thereby minimizing the tail time <inline-formula> <tex-math notation="LaTeX">$T_{\mathrm {tail}}$ </tex-math></inline-formula>, achieving a <inline-formula> <tex-math notation="LaTeX">$14.7\times $ </tex-math></inline-formula> reduction in tailing current loss, suppressing abnormal conduction, and reducing reverse conduction loss by 37.0%.