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AlN Thin-Film Vacuum Ultraviolet Photodetector With High Operating Temperature and High Rejection Ratio
- Source :
- IEEE Transactions on Electron Devices; 2024, Vol. 71 Issue: 3 p1428-1432, 5p
- Publication Year :
- 2024
-
Abstract
- AlN thin-film vacuum ultraviolet (VUV) photodetector was prepared by molecular beam epitaxy (MBE) device on <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-Al2O3 substrate. By a complete surface nitridation of sapphire substrate in nitrogen plasma, the epitaxial preparation of high-quality thin AlN film was realized without any buffer layer. The AlN photodetector has an ultralow dark current (~40 fA at 20 V), a high VUV/ultraviolet-c (UVC) (<inline-formula> <tex-math notation="LaTeX">${R}_{{185}}/{R}_{{222}}$ </tex-math></inline-formula>) rejection ratio (<inline-formula> <tex-math notation="LaTeX">$10^{{3}}$ </tex-math></inline-formula>), a high responsivity (30 mA/W), and an ultrafast response (90%–10% decay time ~900 ns) at room temperature. More interestingly, an excellent temperature tolerance of the device can be observed, and there is no obvious degradation in the VUV/UVC rejection ratio and response speed with increasing the temperature from 25 °C to 500 °C. Even at 500 °C, the dark current of the device is only 218 pA at 20 V, and the responsivity can reach to 67.3 mA/W. These results indicate that the device has excellent wavelength selective detection ability and high-temperature detection ability in the VUV band, which can be attributed to the relatively high-quality AlN thin film and the avoidance of the impact of buffer layer. Our findings provide an effective way to realize high-performance AlN VUV photodetector, which can be operated in high-temperature environment.
Details
- Language :
- English
- ISSN :
- 00189383 and 15579646
- Volume :
- 71
- Issue :
- 3
- Database :
- Supplemental Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Periodical
- Accession number :
- ejs65705136
- Full Text :
- https://doi.org/10.1109/TED.2023.3303126