Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂

MLA

Hu, Tao, et al. “Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂.” IEEE Electron Device Letters, vol. 45, no. 5, Jan. 2024, pp. 825–28. EBSCOhost, https://doi.org/10.1109/LED.2024.3381966.

APA

Hu, T., Sun, X., Bai, M., Jia, X., Dai, S., Li, T., Han, R., Ding, Y., Fan, H., Zhao, Y., Chai, J., Xu, H., Si, M., Wang, X., & Wang, W. (2024). Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂. IEEE Electron Device Letters, 45(5), 825–828. https://doi.org/10.1109/LED.2024.3381966

Chicago

Hu, Tao, Xiaoqing Sun, Mingkai Bai, Xinpei Jia, Saifei Dai, Tingting Li, Runhao Han, et al. 2024. “Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂.” IEEE Electron Device Letters 45 (5): 825–28. doi:10.1109/LED.2024.3381966.