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High-Power MUTC Photodiode Module for Photonics-Assisted Beyond 100 Gb/S Wireless Sub-THZ Communications in the F-Band

Authors :
Tian, Yuxin
Li, Yaxuan
Dong, Boyu
Xiong, Bing
Zhang, Junwen
Sun, Changzheng
Hao, Zhibiao
Wang, Jian
Wang, Lai
Han, Yanjun
Li, Hongtao
Gan, Lin
Chi, Nan
Luo, Yi
Source :
Journal of Lightwave Technology; August 2024, Vol. 42 Issue: 16 p5616-5623, 8p
Publication Year :
2024

Abstract

Back-illuminated modified uni-traveling carrier photodiode (MUTC-PD) with improved saturation performance at high frequencies is developed and its application in wireless communications is demonstrated. A gradient doped absorption region and a cliff layer with optimized doping concentration are adopted to fine-tune the electric field within the device, so as to alleviate the space-charge screening for high saturation performance. Passive circuits are fabricated on 127-μm-thick quartz substrate for low transmission loss. The fabricated 8-μm-diameter MUTC-PD exhibits flat frequency responses at F-band (90–140 GHz) and high saturation power of 2.3 dBm at 100 GHz. The packaged MUTC-PD module with WR-8 waveguide output serves as a photonics-assisted transmitter for high-performance sub-THz wireless data transmission in the F-band. We have successfully demonstrated a 1-m free space transmission at a carrier frequency of 131.5 GHz. The maximum line rate achieved in our experiment is 120 Gb/s, utilizing 30-Gbaud 16-quadrature amplitude modulation (QAM) signals. Accounting for the overhead of soft-decision forward error correction (SD-FEC), we have achieved a net rate of 104.35 Gb/s for a single channel. Furthermore, a line rate of 100 Gb/s can be maintained for extended distance of free space transmission by simply increasing the input optical power.

Details

Language :
English
ISSN :
07338724 and 15582213
Volume :
42
Issue :
16
Database :
Supplemental Index
Journal :
Journal of Lightwave Technology
Publication Type :
Periodical
Accession number :
ejs67048061
Full Text :
https://doi.org/10.1109/JLT.2024.3395307