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Drain-Leakage Degradation During Single-Event Burnout Experiments in N-Channel Power VDMOS Transistors
- Source :
- IEEE Transactions on Electron Devices; August 2024, Vol. 71 Issue: 8 p4906-4913, 8p
- Publication Year :
- 2024
-
Abstract
- This article investigates the impact of bismuth-heavy ion and high-energy proton irradiation on single-event burnout (SEB) and complete off-state drain-leakage degradation (CO-DLD) in n-channel 115-V-rated vertical-diffused (VD) metal-oxide-semiconductor field-effect transistors (MOSFETs). Initially, bismuth-heavy ion irradiation experiments are conducted to determine the SEB failure threshold voltage (VSEB). CO-DLD is observed, and it is hypothesized that increased temperatures at the source contact and silicon surface may contribute to this degradation. Subsequent experiments with high-energy proton irradiation aim to examine the role of temperature in CO-DLD, eventually discounting it as a contributing factor. Displacement damage is then identified as the principal cause of CO-DLD, with this hypothesis being corroborated by technology computer-aided design (TCAD) simulations. The comprehensive analysis of both experiments and simulations concludes that temperature-induced source-contact degradation is not the primary driver of CO-DLD. Instead, displacement damage caused by bismuth-heavy ion and high-energy proton irradiation emerges as the predominant mechanism behind CO-DLD. This finding is significant as both experiments and simulations confirm that displacement damage leads to CO-DLD in VDMOS transistors, shedding light on protecting the VDMOS from degrading.
Details
- Language :
- English
- ISSN :
- 00189383 and 15579646
- Volume :
- 71
- Issue :
- 8
- Database :
- Supplemental Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Periodical
- Accession number :
- ejs67049878
- Full Text :
- https://doi.org/10.1109/TED.2024.3418302