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Purcell Enhancement and Spin Spectroscopy of Silicon Vacancy Centers in Silicon Carbide Using an Ultrasmall Mode-Volume Plasmonic Cavity
- Source :
- Nano Letters; September 2024, Vol. 24 Issue: 37 p11669-11675, 7p
- Publication Year :
- 2024
-
Abstract
- Silicon vacancy (VSi) centers in 4H-silicon carbide have emerged as a strong candidate for quantum networking applications due to their robust electronic and optical properties, including a long spin coherence lifetime and bright, stable emission. Here, we report the integration of VSicenters with a plasmonic nanocavity to Purcell enhance the emission, which is critical for scalable quantum networking. Employing a simple fabrication process, we demonstrate plasmonic cavities that support a nanoscale mode volume and exhibit an increase in the spontaneous emission rate with a measured Purcell factor of up to 48. In addition to investigating the optical resonance modes, we demonstrate an improvement in the optical stability of the spin-preserving resonant optical transitions relative to the radiation-limited value. The results highlight the potential of nanophotonic structures for advancing quantum networking technologies and emphasize the importance of optimizing emitter–cavity interactions for efficient quantum photonic applications.
Details
- Language :
- English
- ISSN :
- 15306984 and 15306992
- Volume :
- 24
- Issue :
- 37
- Database :
- Supplemental Index
- Journal :
- Nano Letters
- Publication Type :
- Periodical
- Accession number :
- ejs67352965
- Full Text :
- https://doi.org/10.1021/acs.nanolett.4c03233