Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs

MLA

Huang, Lin Hua, et al. “Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs.” Diffusion and Defect Data Part B: Solid State Phenomena, vol. 358, no. 1, Aug. 2024, pp. 79–87. EBSCOhost, https://doi.org/10.4028/p-9MknRR.

APA

Huang, L. H., Liu, Y., Peng, X., Tsuji, T., Onozawa, Y., Fujishima, N., & Sin, J. K. O. (2024). Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs. Diffusion and Defect Data Part B: Solid State Phenomena, 358(1), 79–87. https://doi.org/10.4028/p-9MknRR

Chicago

Huang, Lin Hua, Yong Liu, Xin Peng, Takashi Tsuji, Yuichi Onozawa, Naoto Fujishima, and Johnny Kin On Sin. 2024. “Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs.” Diffusion and Defect Data Part B: Solid State Phenomena 358 (1): 79–87. doi:10.4028/p-9MknRR.