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SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure
- Source :
- Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 362 Issue: 1 p33-40, 8p
- Publication Year :
- 2024
-
Abstract
- The layer structure of 3C-SiC stacked on 4H-SiC is implemented by simultaneous lateral epitaxy (SLE). The SLE, involving spontaneous nucleation of 3C-SiC(111) on the 4H-SiC(0001) surface followed by step-controlled epitaxy, facilitates the creation of a single-domain 3C-SiC layer with an epitaxial relationship to the underlying 4H-SiC, establishing a coherent (111)//(0001) interface aligned in the basal plane. An extremely low state density at an interface between thermally grown SiO<subscript>2 </subscript>and SLE-grown 3C-SiC layer is revealed by local deep level transient spectroscopy (local-DLTS) based on scanning nonlinear dielectric microscopy (SNDM).
Details
- Language :
- English
- ISSN :
- 10120394
- Volume :
- 362
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Diffusion and Defect Data Part B: Solid State Phenomena
- Publication Type :
- Periodical
- Accession number :
- ejs67556927
- Full Text :
- https://doi.org/10.4028/p-3Wy1YI