Investigation of charging/discharging phenomena in nano-crystal memories

In this work we will give a detailed account of the charging/discharging phenomena occurring in semiconductor nano-crystal memories. Memory transfer characteristics and write/ erase transient characteristics are studied for devices with different technological parameters. Experimental results are explained by means of a semi-classical model, based on a modified current continuity approach. This model depicts the effect of the tunnel/top dielectric thickness, dot recovered area and programming voltage on the device performance.