Mobility, Passivating Effect and Thermal Stability of Hydrogen in Silicon Carbide

The diffusion and passivating effect of hydrogen (isotope 2H) in epitaxial p-type SiC is studied by secondary ion mass spectrometry and capacitance–voltage profiling on Schottky diodes. The incorporation of hydrogen is achieved by low-energy ion implantation. The influence of implantation energy, temperature and subsequent annealing is presented. Annealing experiments with an electric field applied reveal a reactivation of passivated acceptors and a H+ ion drift at a surprisingly low temperature of 530 K.