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Characterization of Ge islands on Si (100) substrates
- Publication Year :
- 2004
-
Abstract
- We present a preliminary study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS). Samples were prepared by a high-vacuum evaporation of a 5nm thick Ge layer on Si(100) substrate held at 200 C. The samples were subsequently annealed at different temperatures for 1h in vacuum, yielding to island formation. A Fortran program IsGISAXS was used for the simulation and analysis of Ge islands. Vertical cut (perpendicular to the surface) of the experimental 2D GISAXS pattern has been fitted using a Guinier approximation. Obtained parameters were used for the simulations. The simulated 2D GISAXS pattern well reproduce experimental data for cylindrically shaped islands with morphological parameters R=4 nm, H/R= 0.25 and the average inter-island distance D=5 nm.
- Subjects :
- silicon
germanium
nanostructures
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.57a035e5b1ae..d3c400f48161fd74924f3d1937506be7