Properties of Hogh Porosity Sol-Gel Derived Indium-Tin Oxide films

Authors :: T. F. Stoica
M. Gartner
T. Stoica
M. Losurdo
V.S. Teodorescu
M. G.Blanchin
M. Zaharescu
Source :: Journal of Optoelectronics and Advanced Materials, 7 (2005): 2353–2358., info:cnr-pdr/source/autori:T. F. Stoica, M. Gartner, T. Stoica, M. Losurdo, V.S. Teodorescu, M. G.Blanchin, M. Zaharescu/titolo:Properties of Hogh Porosity Sol-Gel Derived Indium-Tin Oxide films/doi:/rivista:Journal of Optoelectronics and Advanced Materials (Print)/anno:2005/pagina_da:2353/pagina_a:2358/intervallo_pagine:2353–2358/volume:7
Publication Year :: 2005
Publisher :: INOE, Bucuresti , Romania, 2005.
Abstract: ndium-tin oxide (ITO) sol-gel films have been obtained with the void concentration up to 50%. The films are nanostructured with nanocrystals of In2O3:Sn and nanovoids. The information obtained from derivative thermo-gravimetry was used to design the annealing program for ITO film formation with a high void concentration. Multilayer films were obtained by successive deposition. The thickness of one layer was about 9 nm. By successive depositions, the void density of the film is reduced. Quantitative analysis of the void density has been performed by spectroscopic ellipsometry. The conductivity of the films can be varied in a large range by annealing in vacuum or in air, at temperature higher than 200 degrees C.

Language :: English
Database :: OpenAIRE
Journal :: Journal of Optoelectronics and Advanced Materials, 7 (2005): 2353–2358., info:cnr-pdr/source/autori:T. F. Stoica, M. Gartner, T. Stoica, M. Losurdo, V.S. Teodorescu, M. G.Blanchin, M. Zaharescu/titolo:Properties of Hogh Porosity Sol-Gel Derived Indium-Tin Oxide films/doi:/rivista:Journal of Optoelectronics and Advanced Materials (Print)/anno:2005/pagina_da:2353/pagina_a:2358/intervallo_pagine:2353–2358/volume:7
Accession number :: edsair.cnr...........1e27c2346a78e9549e924100a73f8c97