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Effects of growth interruption on high indium content InGaN/GaN multi quantum wells

Authors :
Cheong, M. G.
Choi, R. J.
Kim, C. S.
Yoon, H. S.
Hong, C. -H
Suh, E. -K
Lee, H. J.
Cho, H. K.
Junyoung Lee
Source :
Scopus-Elsevier

Details

Database :
OpenAIRE
Journal :
Scopus-Elsevier
Accession number :
edsair.dedup.wf.001..0632c317b8cb499df881bcfefde72386

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