Microwave performance of InAlAsSb/In0.35Ga0.65Sb/InAlAsSb double heterojunction bipolar transistors

Authors :: Mairiaux, E.
Desplanque, L.
Wallart, X.
Zaknoune, M.
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :: IEEE Electron Device Letters, IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2010, 31, pp.299-301. ⟨10.1109/LED.2010.2040241⟩, IEEE Electron Device Letters, 2010, 31, pp.299-301. ⟨10.1109/LED.2010.2040241⟩
Publication Year :: 2010
Publisher :: HAL CCSD, 2010.

Language :: English
ISSN :: 07413106
Database :: OpenAIRE
Journal :: IEEE Electron Device Letters, IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2010, 31, pp.299-301. ⟨10.1109/LED.2010.2040241⟩, IEEE Electron Device Letters, 2010, 31, pp.299-301. ⟨10.1109/LED.2010.2040241⟩
Accession number :: edsair.dedup.wf.001..0d7e47c5c6a3f3fbcba2cd2095b03abf
Full Text :: https://doi.org/10.1109/LED.2010.2040241⟩

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