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Electrical characterisation of heavily al doped 4H-SiC layer grown by vapour-liquid-solid epitaxy in Al-Si melt

Authors :
Godignon, P.
Jacquier, C.
Blanque, S.
Josep Maria MONTSERRAT
Ferro, G.
Contreras, S.
Zielinski, M.
Monteil, Y.
Source :
Scopus-Elsevier

Details

Database :
OpenAIRE
Journal :
Scopus-Elsevier
Accession number :
edsair.dedup.wf.001..192549c1cec8f984388d849826d01be8

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