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Study of AlN/SiO2 as dielectric layer for SiC MOS structures

Authors :
Biserica, O.
Godignon, P.
Jordà, X.
Josep Maria MONTSERRAT
Mestres, N.
Hidalgo, S.
Source :
Scopus-Elsevier

Details

Database :
OpenAIRE
Journal :
Scopus-Elsevier
Accession number :
edsair.dedup.wf.001..28393d7577007e91639939f0e8c8d8aa

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