Cite
Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor/topological insulator heterostructure
MLA
Nguyen, Khang H. D., et al. Room-Temperature Spin Injection and Spin-to-Charge Conversion in a Ferromagnetic Semiconductor/Topological Insulator Heterostructure. Sept. 2021. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.dedup.wf.001..31333380ce7821519c4cbdd39aa6e4f2&authtype=sso&custid=ns315887.
APA
Nguyen, K. H. D., Nguyen, K. H. D., Le, D. A., Pham, N. H., Pham, N., & Tanaka, M. (2021). Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor/topological insulator heterostructure.
Chicago
Nguyen, Khang H D, Khang Huynh Duy Nguyen, Duc Anh Le, Nam Hai Pham, Namhai Pham, and Masaaki Tanaka. 2021. “Room-Temperature Spin Injection and Spin-to-Charge Conversion in a Ferromagnetic Semiconductor/Topological Insulator Heterostructure,” September. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.dedup.wf.001..31333380ce7821519c4cbdd39aa6e4f2&authtype=sso&custid=ns315887.