Cite
28 nm UTBB FD-SOI technology for Silicon-based quantum dots and Cryo-CMOSelectronics
MLA
Kriekouki, I., et al. 28 Nm UTBB FD-SOI Technology for Silicon-Based Quantum Dots and Cryo-CMOSelectronics. Oct. 2019. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.dedup.wf.001..380efdf281da1ea9d5a29ffaa5d26278&authtype=sso&custid=ns315887.
APA
Kriekouki, I., Rochette, S., Rohrbacher, C., Camirand Lemyre, J., Pioro-Ladriere, M., Drouin, D., Barragan, M. J., Mir, S., & Galy, P. (2019). 28 nm UTBB FD-SOI technology for Silicon-based quantum dots and Cryo-CMOSelectronics.
Chicago
Kriekouki, I., Sophie Rochette, Claude Rohrbacher, J. Camirand Lemyre, Michel Pioro-Ladriere, Dominique Drouin, Manuel J. Barragan, Salvador Mir, and Philippe Galy. 2019. “28 Nm UTBB FD-SOI Technology for Silicon-Based Quantum Dots and Cryo-CMOSelectronics,” October. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.dedup.wf.001..380efdf281da1ea9d5a29ffaa5d26278&authtype=sso&custid=ns315887.