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Optimum design of radiation-hardened and high power Er3+-Yb3+-codoped fiber amplifiers by means of particle swarm approach

Authors :
Mescia, L.
Girard, Sébastien
Fornarelli, G.
Giaquinto, A.
Prudenzano, Francesco
de Sario, M.
Boukenter, A.
Ouerdane, Y.
Politecnico di Bari
Département de Conception et Réalisation des Experimentations, CEA-DIF (DCRE CEA)
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Laboratoire Hubert Curien [Saint Etienne] (LHC)
Université Jean Monnet [Saint-Étienne] (UJM)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)
Laboratoire Hubert Curien (LHC)
Institut d'Optique Graduate School (IOGS)-Université Jean Monnet - Saint-Étienne (UJM)-Centre National de la Recherche Scientifique (CNRS)
Source :
Si02 Advanced Dielectrics and Related Devices-Conference book, Si02 Advanced Dielectrics and Related Devices, Si02 Advanced Dielectrics and Related Devices, Jun 2012, Hyères, France. pp.67-68
Publication Year :
2012
Publisher :
HAL CCSD, 2012.

Abstract

International audience; In this paper, the design of a rare earth-doped claddingpumped fiber amplifiers is carried out by means of a homemade computer code based on particle swarm optimization (PSO) and rate equation model. In particular, taking into account experimental results, a full investigation of radiation-hardened double-cladding Er3+-Yb3+-doped fiber amplifiers (EYDFAs) has been performed. A detailed rate equation model including the first and secondary energy transfer between Yb3+ and Er3+, the presence of Er3+ and Yb3+ clusters, the amplified spontaneous emission (ASE) and the most relevant Er3+ upconversion and cross relaxation mechanism is considered. The obtained results highlight that the developed PSO algorithm is an efficient and reliable tool for performing the optimum design of radiation-hardened and high-power EYDFAs.

Details

Language :
English
Database :
OpenAIRE
Journal :
Si02 Advanced Dielectrics and Related Devices-Conference book, Si02 Advanced Dielectrics and Related Devices, Si02 Advanced Dielectrics and Related Devices, Jun 2012, Hyères, France. pp.67-68
Accession number :
edsair.dedup.wf.001..3b7754eca2574e4764a67b6dc84e3e97