Effect of antimony on structure strained quantum well laser

This work consists of highly strained quantum well GaxIn1-xNyAs1-y-zSbz quaternary structure modeling. We have studied the effect nitrogen and antimony incorporation into ternary semiconductor III-V alloys. We found that incorporating nitrogen in the structure leads to a splitting of the conduction band into two sub bands while adding antimony will split the valence band. This separation will give a reduced a band gap energy which is interesting for getting a 1.55µm wavelength optical fiber window. We have also studied the effect of strain on the band structure and particularly on the conduction band. We have calculated the x(Ga), y(N) and z(Sb) concentrations taking into account the effects of the strain, the temperature and the quantum well width.