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Study of Strain Effects on Carbon-Based Transistors With Semi-Analytic and Ab Initio Models
- Source :
- IEEE Transactions on Magnetics, IEEE Transactions on Magnetics, Institute of Electrical and Electronics Engineers, 2018, 54 (3), pp.1-4. ⟨10.1109/TMAG.2017.2765705⟩
- Publication Year :
- 2018
- Publisher :
- HAL CCSD, 2018.
-
Abstract
- International audience; In this paper, the current-voltage characteristics of a graphene-based transistor in the presence of external strain are computed with different methods. A simplified semi-analytic method allows fast computation of the electric parameters by granting a good accuracy. A more complex matrix method based on second quantized version of Schrodinger equation by means of non-equilibrium Green's function is used to validate the semi-analytic one. Both models are developed to evaluate the impact of mechanical stresses on this novel class of nano-transistors, where they are aimed for applications in the domain of flexible electronics.
Details
- Language :
- English
- ISSN :
- 00189464
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Magnetics, IEEE Transactions on Magnetics, Institute of Electrical and Electronics Engineers, 2018, 54 (3), pp.1-4. ⟨10.1109/TMAG.2017.2765705⟩
- Accession number :
- edsair.dedup.wf.001..456413d865d4af094aa8a60826285e59