Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

Authors :: Doyoung, J.
Lee, J. W.
Tachi Kiichi
Montes, L.
Ernst, T.
Tae Kim Gyu
gerard ghibaudo
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
Domenget, Chahla
Source :: Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2010, 97, pp.073505, HAL
Publication Year :: 2010
Publisher :: HAL CCSD, 2010.
Abstract: International audience

Subjects :: [PHYS.COND.CM-GEN] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
ComputingMilieux_MISCELLANEOUS

Language :: English
ISSN :: 00036951
Database :: OpenAIRE
Journal :: Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2010, 97, pp.073505, HAL
Accession number :: edsair.dedup.wf.001..45a3a992b1c0ac5918e1c7f095db92b6

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