Breaking the AlGaN/GaN HEMT scaling limit with AlInN barriers

Authors :: Medjdoub, F.
Carlin, J.F.
Gonschorek, M.
Feltin, E.
Py, M.A.
Grandjean, N.
Gaquière, Christophe
Kohn, E.
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :: Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2007, Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2007, 2007, Venice, Italy
Publication Year :: 2007
Publisher :: HAL CCSD, 2007.

Language :: English
Database :: OpenAIRE
Journal :: Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2007, Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2007, 2007, Venice, Italy
Accession number :: edsair.dedup.wf.001..54b57dfa447d38e6fbf47667d677130a

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