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Deep level study in epitaxial 4H-SiC grown on substrates inclined toward <1 1̄00>

Authors :
Kato, M.
Masaya Ichimura
Arai, E.
Nishino, S.
Source :
Scopus-Elsevier

Details

Database :
OpenAIRE
Journal :
Scopus-Elsevier
Accession number :
edsair.dedup.wf.001..61fe262745d3d1219851274eee6872ae

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