Investigation of the Static Performance and Avalanche Reliability of High Voltage 4H-SiC Merged-PiN-Schottky Diodes

A comprehensive range of static measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results shows that the forward voltage of Silicon PiN diode is lower at the on-state, even at high temperatures and at high currents. Higher forward voltage and positive temperature coefficient are observed for SiC devices during the static measurements, while they outperform the Silicon devices in terms of the electrothermal ruggedness, as validated by the UIS measurements and its subsequent calculated avalanche energy and die area as measured by means of CT-Scan imaging of the devices.